By Dimitris Gizopoulos
This is a brand new kind of edited quantity within the Frontiers in digital checking out ebook sequence dedicated to fresh advances in digital circuits checking out. The publication is a finished elaboration on vital subject matters which trap significant study and improvement efforts this present day. "Hot" issues of present curiosity to check expertise neighborhood were chosen, and the authors are key participants within the corresponding topics.
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Additional resources for Advances in Electronic Testing: Challenges and Methodologies (Frontiers in Electronic Testing)
36 Chapter 1 – Defect-Oriented Testing The second aspect of the results related to the effectiveness of IDDQ testing. Two Venn diagrams are shown in Figure 1-28. Again, several results are clear: (1) Many die fail IDDQ testing uniquely. At a 50uA threshold (considered reasonable at the time), more parts fail IDDQ than all other tests combined. (2) The number of IDDQ fails is strongly tied to the threshold chosen. (3) A small number of IDDQ fails also fail atspeed tests (note how 25 AC scan and functional fails becomes 22 when the threshold is reduced from 200uA to 50uA).
IDDQ will continue to be used for these circuits for the foreseeable future. For some other chips, usually high performance devices that are “plugged into a wall”, IDDQ is no longer 10 Subthreshold leakage occurs across the channel of a transistor even though the gate voltage is too low to turn on the transistor. It increases as channel length shrinks and also strongly varies with increasing temperature. 11 Gate leakage is conduction across the oxide of a transistor between the gate and substrate.
In addition to gate length, other 2 Fowler-Nordheim tunneling is the process by which an electron is able to “tunnel” under the potential barrier represented by the physical break in conducting material. As a result, current is still able to flow across a physically small open. 8 Chapter 1 – Defect-Oriented Testing parameters of interest include dopant concentration (device mobility, capacitance), metal thickness (resistance, capacitance), oxide thickness (leakage, performance). Some variation is expected, and design must accommodate it, but at some point variation will exceed the tolerance or margin in the design, and it becomes a defect.